Designing Porous Silicon Films as Carriers of Nerve Growth Factor

Optoelectronic study in porous silicon thin films

A photoconductivity (PC) study in as deposited porous silicon (PS) thin films is presented in this work. PS thin films were produced by the electrochemical anodizing method at different anodizing times. The films surfaces were characterized by SEM and porosity was determined by gravimetric methods. Photoluminescence and PC measurements were taken at room temperature. The maximum of the photolum...

Nerve growth factor in human semen: Effect of nerve growth factor on the normozoospermic men during cryopreservation process

Objective(s):Althoughroutinely applied in assisted reproductive technology, human sperm cryopreservation is not a completely successful procedure. Adverse effects of cryopreservation on the fertilization capacity, motility, morphology, and viability of spermatozoa have been proven; cryopreservation has also shown a role in sperm DNA fragmentation and infertility. The post-thaw survival of sperm...

Nanotemplated polyelectrolyte films as porous biomolecular delivery systems. Application to the growth factor BMP-2.

Biomaterials capable of delivering controlled quantities of bioactive agents, while maintaining mechanical integrity, are needed for a variety of cell contacting applications. We describe here a nanotemplating strategy toward porous, polyelectrolyte-based thin films capable of controlled biomolecular loading and release. Films are formed via the layer-by-layer assembly of charged polymers and n...

Kerfless Wafering: Porous Silicon Reorganization and Epitaxial Silicon Growth

GaN growth on porous silicon by MOVPE

GaN films have been grown at 1050 8C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 8C during 10 min under a mixture of ammonia (NH3) and hydrogen (H2). The PS samples were characterized after annealing by scanning electronic microscope (SEM). We observed that the annealing under the GaN gr...